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Narrow band gap (~1.5eV) hydrogenated amorphous silicon (a-Si:H) were fabricated by a chemical annealing technique using noble gases (Ar, He, Ne). Although hydrogen content in the film was reduced to ~1atm% and band gap was decreased to 1.52eV, high photoconductivity and large mobility-lifetime products were maintained and no marked changes in the short-range structure was found. Using these narrow...
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