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The defect properties of laser‐crystallized polycrystalline silicon–germanium (Si–Ge) thin films on glass substrates were investigated with electron spin resonance (ESR) and conductivity measurements. The ESR measurements reveal that laser‐crystallized poly Si1−xGex thin films with 0 < x < 0.84 contain a dangling‐bond concentration of about Ns = 4 × 1018 cm−3, roughly independent of the Ge content...
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