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The forward bias current–voltage (I–V) characteristics of n-GaN Schottky diodes on sapphire substrate were investigated over a wide temperature range of 70–500K. For models based on localised regions of lowered Schottky barrier height, a distributed barrier height should be expected when these localised regions are comparable to or smaller in size than the depletion width. However, a suitable fit...
It is postulated that donor-like nitrogen vacancies, caused by the sputtering of a Schottky-barrier metal onto p-type gallium nitride, diffuse into the GaN and form a surface layer in which both the minority-carrier lifetime and mobility are drastically reduced. Such a damaged surface layer is shown to reduce the responsivity of p-GaN Schottky-barrier photodiodes, thereby offering an explanation for...
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