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We report on the surface morphology and electrical characterisation of p-GaN layers etched using inductively coupled plasma reactive ion etching (ICP-RIE). The use of ICP-RIE etching at low ICP and RF powers of 150 and 75W, respectively has produced a smooth surface, with a root-mean-square (RMS) amplitude of 1.80nm. Etching was performed for 3min with an etching rate of 175nm/min. However, despite...
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