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In this study, double barrier (DB) resonant tunneling structures based on III-V semiconductors were fabricated and its potential for selective energy contacts (SEC) of hot carrier solar cells was evaluated. An AlGaAs/GaAs/AlGaAs quantum well (QW) based DB structure was fabricated by molecular beam epitaxy (MBE) on GaAs (001) substrate, which acts as SEC for electrons. The current-voltage (I-V) characteristics...
We investigate hot carrier solar cells using III-V semiconductors. Here, the properties of a quantum well double barrier resonant tunneling structure comprised of Al0.6Ga0.4As/GaAs/Al0.6Ga0.4As was used as selective energy contacts (SEC). The sample was fabricated by MBE on GaAs(001). The GaAs epitaxial layers were used as the optical absorbing layer. A quantum well resonant tunneling structure was...
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