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Pd/Ta2O5/SiC Schottky-diode hydrogen sensors were fabricated, and their hydrogen gas sensing performance was investigated at 573 K and 773 K. Interfacial Ta2O5 films of 120 nm in thickness were formed by using rapid thermal oxidation (RTO) of the sputtered Ta films on SiC. The crystallinity of the Ta and the Ta2O5 films were characterized by using X-ray diffraction (XRD). As-sputtered Ta films on...
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