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This study has revealed that HNO 3 and H 2 O vapors can be utilized as direct thermal oxidation or postoxidation annealing agents at a temperature above 1000°C; as they play a major role in simultaneous oxidation/nitridation/hydrogenation processes at the bulk oxide and SiO 2 /SiC interface. The varied process durations of the above-mentioned techniques contribute to the development...
Black SiC formation by plasma etching with SF 6 /O 2 chemistry is reported. Black SiC was produced by depositing Si overlayer on SiC and then etching the Si/SiC stack sequentially, thus replicating the black Si morphology to SiC. Black SiC is obtained with almost zero reflectance over the wavelengths from 300nm to 1050nm. Thicker Si film was advantageous, and it was important to optimize...
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