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A comprehensive non-linear PHEMT core model for switch applications is described. The model combines an accurate description of CV below pinch-off and a 2D CV function above pinch-off for better charge and capacitance modeling. At the same time, more accurate is the model's IV prediction on the current in the near pinch-off region. The model has detailed leakage equations and dispersion function covering...
A comprehensive nonlinear model of GaAs resistor is developed based on DC, pulse and power measurements. The model accounts for electrical and thermal feathers such as velocity saturation, self-heating and breakdown effects. The resistor nonlinearity is mainly due to the velocity saturation, and enhanced by self-heating effect. The model provides accurate performances in DC, transient and harmonic...
With increasing scale/complexity in phemt switch circuits and dimension shrinking of unit phemt switch devices, distributed effects are becoming crucial on insertion loss and harmonics, especially the second harmonic. Distributed effects of metal resistances and inductances are taken into account in this paper. It is shown that distributed effects, either along the drain/source fingers or along the...
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