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Two 4H silicon carbide (SiC) radiation detectors based on Schottky diode were fabricated with high-quality lightly doped 4H-SiC epitaxial layer with sensitive volumes of 5mm×5mm×20μm and 3mm×3mm×100μm; their dark current were in the range of 0.3pA to 63nA at a bias voltage of 600V. These detectors were used in detection of alpha particles (emitted by 237Np, 238Pu, 243Am and 244Cm source) and oxygen...
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