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In article number 1804378, Francesco Rossella and co‐workers describe a single n‐type InAs nanowire, electrically contacted, which is surrounded by an ionic liquid – a neutral ensemble of positive and negative ions, liquid at room temperature. A large metallic electrode forces the positive ions to wrap the nanowire. The resulting electric field induces electron accumulation in the nanowire. The ionic...
Here, the operation of a field‐effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO2/Si++ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic‐like behavior in the nanowire is shown...
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