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As the integration density rockets up for contemporary VLSI circuits, power consumption limits the scalability of technology advancement of CMOS. Spin transfer torque-magnetic random access memory (STT-MRAM), as one of the emerging non-CMOS technologies, has the promising prospect of low standby power, fast access speed and compatibility with the CMOS fabrication process. However, with the technology...
Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference...
Spin transfer torque magnetic random access memory (STT-MRAM) has become one of the leading candidates for the next generation memory applications, thanks to its many attractive features. However STT-MRAM faces severe reliability challenges because of its intrinsic physical characteristics and the continuously scaling technology process. Thereby multi-bit error correction codes are considered indispensable...
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