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Over the last decade, thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have significantly contributed to flat‐panel display (FPD) technologies because of their various advantages. However, a practical complementary circuit using TAOSs has not been realized as conventional TAOSs exhibit only n‐type semiconducting behavior. Herein, we propose a material design...
Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n‐type TAS materials with excellent performance, such as amorphous In‐Ga‐Zn‐O (a‐IGZO), are already known, no complementary p‐type TAS has been realized to date. Here, a material design concept for p‐type TAS materials...
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