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The DV-Xα method was used to calculate the bond order between atoms in cubic silicon carbide (β-SiC) with a point defect. Three types of β-SiC cluster models were used: pure cluster, vacancy cluster and interstitial cluster. The bond order was influenced by the kind of defects. The bonds between C interstitial and neighboring C atoms were composed of anti-bonding type interactions, while the bonds...
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