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In this article, the nonvolatile nano-floating gate memory (NFGM) device was fabricated with self-assembled metal-oxide nano-particles embedded in a polyimide gate insulator and characterized.
We fabricated and characterized the electrical properties of nano-floating gate capacitors with SiC nano-particles embedded in SiO2 layer. We also showed a capability of this structure to application of the nonvolatile memory device.
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