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The chemical reactions in the SiCl4-Si-H2 system using a low temperature hydrogenation technique related to the Siemens process were studied based on thermodynamics. The diagrams of standard Gibbs free energy of formation and equilibrium constants for seven reactions used as a function of temperature in this system were calculated and plotted for a temperature range of 473 K to 1073 K. It showed that...
Boron removal from metallurgical grade silicon (MG-Si) by metallurgical process plays an important role in the production of solar grade silicon (SoG-Si). However, the effects of other impurities in MG-Si on boron removal are not yet well known. The covalent interactions between Si and B, Fe, Al or Ca in the corresponding binary and ternary structures at 1873 K are studied in present work by ab initio...
Aluminum is one of the main impurity elements in metallurgical-grade silicon (MG-Si). The methods of aluminum removal from MG-Si are slag refining, directional solidification, acid leaching and vacuum evaporation refining, respectively. Based on the theoretical calculation, the vacuum evaporation refining experiments for aluminum removal were carried out in this paper. The effects of refining time...
The removal of impurities from metallurgical grade silicon using the O2 and H2O-O2 gas blowing techniques was firstly studied by thermodynamics. The relationships between the boron content in refined silicon and the equilibrium partial pressures of gaseous boride species were established, which shows a theoretical limitation for boron removal from metallurgical grade silicon using the H2O-O2 gas blowing...
Introduction It is a challenge that boron is removed in upgrading metallurgical grade silicon (MG-Si) to solar grade silicon (SoG-Si) with a metallurgical process. In this research, the Si-B binary system is thermodynamically assessed and characterized by using the CompuTherm Pandat software, which is helpful to the boron removal in refining MG-Si to SoG-Si. Methods The Si-B binary system was thermodynamically...
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