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This study examined the dry etching characteristics of palladium and GaN/AlGaN superlattices using Cl2/CHF3 and Cl2/Ar chemistry formed by an inductively coupled plasma system for the fabrication of ridges of laser diodes. Although the etch rates of n-GaN and AlGaN/GaN superlattices were similar using Cl2/Ar chemistry, the etch rate of the latter was quenched using Cl2/CHF3 chemistry due to the formation...
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