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In this paper, we deposited ZnO thin films by RF magnetron sputtering at room temperature from un-doped targets. Wet chemical etching of ZnO films in (NH4)2CO3 and NH4OH solutions were examined. For comparison, hydrochloric acid was also used as an etchant. The NHx-based alkaline solutions provide well-controlled etching rate, and smooth surface and sidewall profiles. Although NHx-based alkaline solution...
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