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Hydride vapor phase epitaxy (HVPE) grown GaN was evaluated for high power Schottky diodes (SDs) because it contains much less carbon and grows much more rapidly than other typical growth methods. The results are encouraging for applications <1000V in that breakdown voltages (V B ) near this value can be readily obtained with figures of merit (FOM) of ≈250MW/cm 2 that most likely...
Evidence of a strong electric field aiding carrier collection is observed in an n-GaN/i-InGaN/p-GaN inverted polarity solar cell structure, detected by pump-probe electroabsorption and THz spectroscopy.
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