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Amorphous Ge1-x Mnx thin films grown by low temperature vapor deposition were annealed and their electrical and magnetic properties have been studied. Amorphous Ge1-xMnx thin films were annealed at 300°C, 400°C, 500°C, 600°C and 700°C for 3 minutes in high vacuum chamber. X-ray diffraction and TEM analyses reveal that as-grown Ge1-xMnx thin films are amorphous, and fine crystalline phases are precipitated...
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