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The dependence of the MOSFET threshold voltage variability on device geometry (width (W) and length (L)) has been studied from experimental data. Our results evidence, in agreement with other works, deviations from the Pelgrom's rule, especially in smaller technologies. TCAD simulations were also performed which further support the experimental data and provide physical information regarding the origin...
In this paper, we establish a general framework for understanding subwavelength imaging by means of complex-plane analysis of the Sommerfeld integral for a magnetic line source over a subwavelength imaging lens. The Sommerfeld integral of the transmitted field is calculated in terms of discrete and continuous spectra. This spectral decomposition makes it possible to achieve physical insight regarding...
A circuit model approach is here presented to characterize bi-dimensional arrangements of dual-polarized elements. This contribution is an extension of the physical insightful approach previously proposed by some of the authors. The main novelty here resides in the fact that the scatterer may support two different current profiles. This feature becomes crucial for the accurate characterization of...
A physical insightful and quasi-analytical circuit model is here proposed in order to characterize frequency selective surfaces composed by scatterers/apertures of arbitrary geometry. The present work is an extension of the approach previously proposed by some of the authors that dealt only with simple dipole-based periodic surfaces. In order to account for scatterers of more complex shape, their...
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