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A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum2) and a low available current density (ap3 mA/mum2) which is...
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (RTDs). InAlP/InGaAs modulation-doped (MD) heterojunctions with high electron mobility were successfully grown. Practical wet-etching selectivity in even...
We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 1018cm-3. By these characteristics, oscillators with the fundamental oscillation exceeding...
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