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We report the self-catalysed growth of InAs1-xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1-xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1-xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb...
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