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Inorganic solid-state electrolyte film based on H3PO4-treated nanogranular SiO2 with high specific capacitance (8 μF/cm2) is developed for vertical indium-tin-oxide (ITO) homojunction thin-film transistors (TFTs) fabrication. Such proton conductor reduces the operating voltage of the vertical homojunction TFTs to 0.8 V due to the enhanced electric-double-layer capacitance. Vertical ITO TFTs gated...
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