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Reliability characteristics of ZrO2 gate dielectric films on p-GaAs with ultrathin silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered ZrO2 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been...
In this work, we present the results of physical and electrical characterization of Ti-based high-k gate dielectrics on Ge substrates. To improve the electrical properties, nitrogen engineering has been employed to convert the lossy GeO2 interfacial layer to its oxynitride, and thus forming a TiO2/GeOxN3/Ge stacked-gate structure with improved interfacial and electrical properties. Charge trapping,...
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