The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Rapid thermal oxidation of high-Ge content (Ge-rich) Si 1−x Ge x (x=0.85) layers in dry O 2 ambient has been investigated. High-resolution X-ray diffraction (HRXRD) and strain-sensitive two-dimensional reciprocal space mapping X-ray diffractometry (2D-RSM) are employed to investigate strain relaxation and composition of as-grown SiGe alloy layers. Characterizations of ultra...
Capacitance–voltage (C–V) technique is used to investigate the electronic properties of Si 0.3 Ge 0.7 hetero layers deposited on fully relaxed-Si 0.4 Ge 0.6 . This is a fast and nondestructive method to determine important electronic properties, such as, apparent doping concentration, SiGe layer thicknesses, and threshold voltage and valence band offset in a heterostructure...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.