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Physical and electrical properties of sputtered deposited Y 2 O 3 films on NH 4 OH treated n-GaAs substrate are investigated. The as-deposited films and interfacial layer formation have been analyzed by using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). It is found that directly deposited Y 2 O 3 on n-GaAs exhibits excellent...
Electrical and reliability characteristic of Hf-based GaAs metal-oxide-semiconductor (MOS) capacitors (TaN/HfO2/HfOxNy/p-GaAs) with ultrathin HfOxNy interfacial layer is investigated. Charge trapping behavior has been studied under both the DC and dynamic voltage stressing. Transient response and the degradation mechanism of the dielectric have been studied both under positive and negative DC gate...
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