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The minority carrier lifetime and diffusion length in partially strain-compensated Si 1-x-y Ge x C y ternary alloys or tensilely strained Si 1-y C y layers have been measured by using capacitance-time (C-t) transient technique. The substrate doping (N B ) of molecular beam epitaxy (MBE) grown Si 0.83 ...
The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si 0.795 Ge 0.2 C 0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 μs has been observed. The data indicate that the minority carrier lifetimes are degraded due to...
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