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Advanced metal-insulator-metal capacitors with ultra thin (EOT-2.3-5.3 nm) RF sputter-deposited TaAlOx dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory,...
Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO 2 films on partially strain-compensated Si 1-x-y Ge x C y /n-Si substrates are reported. Metal insulator semiconductor (MIS) structures were used for high frequency capacitance-voltage (C-V), current-voltage (I-V), and Fowler-Nordheim (F-N) constant current stressing...
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