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Zirconium nitride (ZrN) films were deposited on Si(100) substrates using the hollow cathode ion-plated (HCD-IP) technique. The deposition conditions were designed to deposit stoichiometric ZrN films, and the thickness of the film was also controlled. The substrate bias was selected as the controlling parameter ranging from floating to -300 V. The purpose of this study is to investigate the effect...
Titanium nitride (TiN) films were deposited on Si(100) substrates using a hollow cathode discharge ion plating (HCD-IP) technique. Based on previous experimental results, the optimum deposition conditions were chosen. The thickness of the TiN film and the angle between the specimen surface and the evaporating source (coating angle) were selected as the variable parameters. The purpose of this study...
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