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This paper presents the asymmetric issue of FinFET device after hot carrier injection (HCI) effect and impact on the digital and analog circuits. The interface state distribution along the FinFET channel is first extracted from hot carrier injection experimental data, and then develops a compact FinFET model to simulate the impact on asymmetric distribution of interface states to the device characteristics...
This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device drift-diffusion simulation. Then the circuit performance evaluation is performed by feeding...
Existing power diode models in most time-domain circuit simulators cannot accurately present the reverse recovery characteristics of actual diode devices with fast simulation speed. Ma-Lauritzen model is a relatively simple solution for modeling the reverse recovery of diode with reasonable accuracy but so far little result has been reported on the methodology and process for applications in circuit...
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