The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The etch characteristics of Ru thin films patterned with TiN hard masks in O2/Ar, CH4/Ar and O2/CH4/Ar gas mixtures were studied using inductively coupled plasma reactive ion etching. When the Ru films were etched in O2/Ar gas, the etch rates of the Ru films and TiN hard masks decreased but the etch selectivity of the Ru films to the hard mask increased with increasing O2 concentration. The etch profiles...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.