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Depth dependence of ion beam induced epitaxial crystallization in Si has been studied to investigate the diffusion of defects responsible for crystallization. Regrowth rates for 3 MeV Au, 3 MeV Si and 5 MeV Au were measured by ion channeling for different depths. Decreases in regrowth rates were clearly observed near the surface (<1000 Å). Calculated damage profiles also decreased near the surface...
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