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Fully epitaxial magnetic tunnel junctions (MTJs) consisting of a Co2MnSi (CMS) upper free layer, a MgO tunnel barrier, and a Co50Fe50 lower pinned layer were fabricated for sensor application. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with a relatively high TMR ratios of 94% at room temperature (209% at 4.2 K) with Vhalf of approximately - 0...
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