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Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.
The photoluminescence of self-interstitials in silicon produced by ion implantation is investigated. A range of annealing temperatures have been used to follow the evolution of these defects. The effect on the formation of these defects in the presence of B and P dopants is considered. As expected, boron is found to reduce the W-line. Phosphorous also reduces the luminescence but to a lesser extent.
Implant activation annealing of Si-implanted GaN is reported for temperatures from 1100 to 1400°C. Free electron concentrations up to 3.5×1020 cm−3 are estimated at the peak of the implanted profile with Hall mobilities of ∼60 cm2/Vs for annealing at 1300°C for 30 s with an AIN encapsulant layer. This mobility is comparable to epitaxial GaN doped at a similarly high level. For annealing at ≥1300°C,...
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