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Integrated components for optical networks-on-chip, including III-V microdisk lasers, photodetectors, and wavelength selective circuits, are all demonstrated using a complementary metal-oxide-semiconductor (CMOS) compatible III-V/silicon-oninsulator integration technology at 200mm wafer scale.
Inter-band tunnel field effect transistors (TFETs) have recently gained a lot of interest because of their ability to eliminate the 60mV/dec sub-threshold slope (STS) limitation in MOSFET. This can result in higher Ion-Ioff ratio over a reduced gate voltage range, thus predicting TFETs superior for low supply voltage (VDD ≤ 0.5V) operation. Unlike Si and Ge, III-V semiconductors like In0.53Ga0.47As...
In this paper, an empirical nonlinear model for high electron mobility transistors (HEMTs) is presented. Unlike the conventional large-signal models whose fitting parameters are coupled to the measured I-V and C-V characteristics, the proposed modeling equations are direct formulated from the second-order derivative of drain current (I-V) and gate charge (Q-V) with respect to gate voltage. As a consequence,...
Using a 7.5 ??m wide InP Micro-Disc-Laser, with a very low ~100 ??A threshold current, heterogeneously integrated on top of Silicon on Insulator substrate, all optical NRZ wavelength conversion at speeds up to 20 Gb/s is demonstrated.
We demonstrate enhanced nonlinearity in an SOI microcavity by heterogeneously integrating a III-V overlay on top of the SOI waveguide layer. Nonlinear transmission and all-optical modulation is observed.
III-Vsilicon-on-insulator photonics comprises the heterogeneous integration of a III-V layer on top of an SOI waveguide circuit. We elaborate on the fabrication technology and the realization of III-V/SOI photonic integrated circuits.
The characterizations of polymer microtip array coated GaN thin film using femtosecond pulsed laser deposition have been studied. The results indicate that die GaN thin film deposited on polymer array is hexagonal polycrystalline, and die GaN microtip FEA has uniform size and well-defined profile, which shows a field emission characteristics.
GaN is considered to be an interesting material for field emission cathodes due to its stability. GaN thin films have been grown by femtosecond pulsed laser deposition (PLD) and nanosecond PLD. X-ray diffraction (XRD) and scanning electronic microscope (SEM) were used to characterize the structural properties of the deposited GaN thin films. The results show demonstrated that there were great potential...
Asymmetric Fabry-Perot reflection modulators based on strained InGaAs/GaAs multiple quantum wells are described. These devices give 2.8 dB of contrast at very low applied voltages (4 V) with an insertion loss of 4.4 dB.<<ETX>>
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