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A series of gas barrier films on colorless polyimide substrates are studied at G4.5 backplane. The performances of barrier layer and TFT are identified by the film‐forming temperature, film structure, reliabilities, NBTIS and WVTR. The use of a SiNx‐SiOx (100nm–500nm) at PECVD temperature 285/295 °C resulted in the best light transmittance and reliabilities, and the electrical properties of a‐IGZO...
In0.53Ga0.47As epitaxial films are grown on 2-inch diameter Si (111) substrates by growing a low-temperature In0.4Ga0.6As buffer layer using molecular beam epitaxy. The effect of the buffer layer thickness on the as-grown In0.53Ga0.47As films is characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy (TEM). It is revealed that...
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