The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have fabricated 15.4%- and 12.4%-efficient CuIn1−xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1−xGaxSe2. The ED and EL device...
In this article, we report the preparation and characterization of CIS films by electrodeposition, employing the codeposition method as well as layer-by-layer deposition. The electrodeposited films were characterized using x-ray diffraction, SEM, EPMA
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.