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Y2O3 and Al2O3 were in-situ atomic layer deposited (ALD) on pristine GaAs(001)-4×6 reconstructed surfaces without surface pretreatments. We have studied the border and interfacial traps in both hetero-structures using the measured electrical responses. On the basis of frequency dispersion analysis of the capacitance-voltage (CV) characteristics, we conclude that Y2O3 has effectively passivated GaAs...
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