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Polycrystalline gate films of Ge x Si 1-x were deposited using low pressure chemical vapor deposition. To study the effects of different Ge contents on the noise properties, a value x=0, 0.3, and 0.6 was selected. Samples of 300 and 500 nm thickness were prepared for comparing the thickness effects on the quality of the gate films. The gate films were implanted with different...
Polycrystalline layers of Si 0.7 Ge 0.3 were deposited using low pressure chemical vapor deposition to a thickness of 500 nm on a n-type silicon wafer covered by SiO 2 . The Si 0.7 Ge 0.3 layers were doped with different concentrations of boron by ion implantation. The morphology and electrical properties have been characterized...
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