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A computational study on short-channel silicon nanowire-FETs is proposed by means of a 3-D full-quantum treatment within the coupled mode space non-equilibrium Green's function formalism. Electron-phonon interaction and surface roughness are considered as limiting scattering mechanisms. The dependence of the effective mobility on the channel length is addressed showing the importance of quantum-phase...
We present numerical simulations of double-gate (DG)-MOSFETs based on a full-3D self-consistent Poisson-Schrodinger algorithm within the real-space non equilibrium Green's function (NEGF) approach. We include a geometrical description of surface roughness (SR) via an exponential auto-correlation law. In order to simulate rough planar structures we adopt periodic boundary conditions along one of the...
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