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Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STI-based LDMOS. Then, the detrimental effect of extended Si/SiO2 interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed...
A numerical investigation of the hot-carrier behavior of a lateral DMOS transistor with shallow trench isolation (STI) is carried out. The measured drain-current degradation induced by hot-carrier stress (HCS) is nicely reproduced by TCAD results revealing that interface traps are mainly formed at the STI corner close to the channel. The effect of typical device design variations on hot-carrier degradation...
Numerical simulations of gate-all-around (GAA) 3C-SiC nanowire (NW) field effect transistors (FETs) are presented using a full quantum self-consistent Poisson-Schrodinger algorithm within the non-equilibrium Green's function (NEGF) formalism. 3C-SiC device performance is benchmarked by a direct comparison with corresponding Si NWFETs. A full quantum treatment of phonon (PH) and surface roughness (SR)...
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