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The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has a more serious voltage overshoot than the silicon insulated gate bipolar transistor (IGBT) due to the fundamental differences of the devices’ parasitic parameters. In this paper, a novel low-inductance packaging structure for a wire-bond-based multichip phase-leg SiC MOSFET module to suppress the voltage overshoot...
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