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Our previous research has shown that dynamic avalanche phenomenon is related to the hole trap level that is induced at an energy level of Ev+0.35 eV. In this study we will describe how we used the DLTS (deep level transient spectroscopy) method and CL (cathode luminescence) method to identify that the defects which form the hole trap level are in fact CiOi that is present in the Si wafer. We fabricated...
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