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A new technique has been developed to explore the potentiality of the newly emerging GaN material for use as Gunn diode and to study the device characteristics of the device. The results obtained for GaN diode are compared with those for GaAs-based Gunn diode. It is observed that GaN-based Gunn diode can generate two orders of magnitude more power than GaAs-based Gunn diode at similar operating conditions...
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