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Results of computer aided studies on mm-wave performance of GaAs (narrow band gap, Eg= 1.42 eV) and zinc-blende (ZB) phase GaN (wide band gap, Eg= 3.2 eV) double drift IMPATT diode for frequencies of operation in the range of 35 to 140 GHz indicate avalanche breakdown at very high electric field for ZB-GaN diode with exhibition of seven times higher breakdown voltage for ZB-GaN (331 V) compared to...
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