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Mixtures of powders of manganese, silicon and metallic gallium were annealed in a stream of ammonia at 1000–1050°C. The products obtained were bulk single crystals of gallium nitride, dimensions up to 4.8×1.0×0.1mm. The concentrations of the dopants were: Mn 7.8±0.12at% and Si 0.5±0.2at%. The influence of the process parameters (temperature, ammonia flow rate and composition of the Mn and Si mixtures...
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