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Novel high operating temperature thermal interface materials (TIMs) in power electronics are required to realize performance gains from the use of wide band‐gap (WBG) semiconductor devices, such as Silicon Carbide (SiC) or Gallium Nitride (GaN). Additionally, the anticipated operating temperature of these devices is higher than 250 °C, preventing use of traditional solder material for packaging....
An accurate knowledge of the complex microstructure of a heterogeneous material is crucial for its performance prediction, prognosis and optimization. X‐ray tomography has provided a nondestructive means for microstructure characterization in 3D and 4D (i.e. structural evolution over time), in which a material is typically reconstructed from a large number of tomographic projections using filtered‐back‐projection...
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