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The effects of surface orientation of Si surface on crystal quality and surface morphology of GaAs layer grown on the Si substrate was investigated. Si (001), (113) and (114) wafers were used as substrates, and GaAs crystal was deposited on the substrate using molecular beam epitaxy. Before growth, the substrates were thermally cleaned in an ultra high vacuum chamber using an infrared heating unit...
The effects of In pre-evaporation on the formation of rotational twin domains (TW) in GaAs layers on Si (111) substrates were systematically investigated. Atomic arrangements of In atoms on the Si substrate during pre-evaporation were studied and resulting formation of TW were discussed. The pre-evaporation of In resulted in the formation of InAs islands. The size of InAs islands was smaller than...
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