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This paper investigates the feasibility of sub-0.2 V high-speed low-power circuits with hetero-channel MOSFET and emerging Tunneling FET (TFET) devices. First, the device designs and characteristics of hetero-channel MOSFET and TFET devices are discussed and compared. Due to the significant leakage current of ultra-low hetero-channel MOSFET devices, assist-circuits are required for...
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