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SiGe films deposited by conventional plasma-enhanced chemical vapor deposition (PECVD) were compared with microcrystalline SiGe (μc-SiGe) films deposited at a low temperature using a laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD). In the LAPECVD system, a CO2 laser was used to assist the pyrolytic decomposition of SiH4 and GeH4 reactant gases. The μc-SiGe structure was identified...
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